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| MCR100-3 ... MCR100-8 G A K TO-92 Plastic Package Weight approx. 0.18g MAXIMUM RATINGS (TJ=25C unless otherwise noted.) Rating Peak Repetitive Forward and Reverse Blocking Voltage, Note 1 (TJ=25 to 125C, RGK=1K) MCR100-3 MCR100-4 MCR100-5 MCR100-6 MCR100-7 MCR100-8 Forward Current RMS (All Conduction Angles) Peak Forward Surge Current, TA=25C (1/2 Cycle, Sine Wave, 60Hz) Circuit Fusing (t=8.3ms) Peak Gate Power - Forward, TA=25C Average Gate Power - Forward, TA=25C Peak Gate Current - Forward, TA=25C (300s,120PPS) Peak Gate Voltage - Reverse Operating Junction Temperature Range @ Rated VRRM and VDRM Storage Temperature Range IT(RMS) ITSM It PGM PGF(AV) IGFM VGRM TJ Ts 2 Symbol Value 100 Unit VDRM and VRRM 200 300 400 500 600 0.8 10 0.415 0.1 0.01 1 5 -40 to +125 -40 to +150 Amps Amps As Watts Watt Amp Volts C C 2 Volts Note 1. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. GSP FORM A IS AVAILABLE SEMTECH ELECTRONICS LTD. ( Wholly owned subsidiary of Honey Technology Ltd.) (R) Dated : 06/12/2003 MCR100-3 ... MCR100-8 CHARACTERISTICS (TC=25C, RGK=1K unless otherwise noted.) Characteristic Peak Forward or Reverse Blocking Current (VAK=Rated VDRM or VRRM) Forward "On" Voltage (ITM=1A Peak @TA=25C) Gate Trigger Current(Continuous dc),Note 1 (Anode Voltage=7Vdc,RL=100 Ohms) Gate Trigger Voltage(Continuous dc) (Anode Voltage=7Vdc,RL=100 Ohms) (Anode Voltage=Rated VDRM,RL=100 Ohms) Holding Current (Anode Voltage=7Vdc,initiating current=20mA) Note 1. RGK current is not included in measurement. IH 5 mA VGT 0.8 Volts IGT 200 A VTM Symbol IDRM,IRRM 10 1.7 A Volts Min Max Unit GSP FORM A IS AVAILABLE SEMTECH ELECTRONICS LTD. ( Wholly owned subsidiary of Honey Technology Ltd.) (R) Dated : 06/12/2003 MCR100-3 ... MCR100-8 100 Gate Trigger Current (A) 90 80 70 60 50 40 30 20 10 -40 -25 -10 5 20 35 50 65 80 95 110 Gate Trigger Voltage (volts) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 -40 -25 -10 5 20 35 50 65 80 95 110 TJ, Junction Temperature ( C) Figure 1. Typical Gate Trigger Curent Versus Junction Temperature 1000 1000 TJ, Junction Temperature ( C) Figure 2. Typical Gate Trigger Voltage Versus Junction Temperature Holding Current (A) Latching Current (A) 100 100 10 -40 -25 -10 5 20 35 50 65 80 95 110 10 -40 -25 -10 5 20 35 50 65 80 95 110 TJ, Junction Temperature ( C) Figure 3. Typical Holding Curent Versus Junction Temperature TC, Maximum Allowable Case Temperature ( C) 120 TJ, Junction Temperature ( C) Figure 4. Typical Latching Curent Versus Junction Temperature 10 IT,Instantaneous On-State Current (AMPS) 110 100 90 80 70 60 50 40 0 0.1 30 C 0.2 60 C 0.3 90 C 0.4 0.5 180 C DC MAXIMUM @ TJ=25 C MAXIMUM @ TJ=110 C 1 0.1 0.5 0.8 1.1 1.4 1.7 2.0 2.3 2.6 2.9 3.2 3.5 IT(RMS), RMS On-State Current (AMPS) Figure 5. Typical RMS Current Derating VT, Instantaneous On-State Voltage (volts) Figure 6. Typical On-State Characteristics SEMTECH ELECTRONICS LTD. ( Wholly owned subsidiary of Honey Technology Ltd.) (R) Dated : 06/12/2003 |
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